Scanning tunneling microscopy study of suicide structure on Si(110) surface

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7155-7157

  Ono, Izumi ^a   Yoshimura, Masamichi ^a   Ueda, Kazuyuki ^a  

^a TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Ni; Si(110); STM; Suicide; Surface

Indexed keywords

EID: 0006372185     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.7155     Document Type: Article

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