High-throughput optical characterization for the development of a ZnO-based ultraviolet semiconductor-laser

Applied Surface Science

Volumn 189, Issue 3-4, 2002, Pages 277-283

  Makino, T ^a   Chia, C H ^a   Segawa, Y ^a   Kawasaki, M ^b   Ohtomo, A ^b   Tamura, K ^b   Matsumoto, Y ^b   Koinuma, H ^b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Combinatirial chemistry; Exciton; II VI compounds; Lasers; Pulsed laser depostion; Quantum confinement effect; Quantum wells; Semiconductor; Stimulated emission; Zinc oxide

Indexed keywords

CHARGE COUPLED DEVICES; CRYOGENICS; EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL FIBERS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; ULTRAVIOLET RADIATION; ZINC OXIDE;

OPTICAL CHARACTERIZATION;

SEMICONDUCTOR LASERS;

EID: 0037188098     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)01001-7     Document Type: Conference Paper

References (20)