Polarisation insensitive InGaAs/InGaAsP electro-absorption intensity modulator using quantum well intermixing process

Electronics Letters

Volumn 38, Issue 5, 2002, Pages 241-242

  Ng, S L ^a   Lim, H S ^a   Lam, Y L ^a   Chan, Y C ^a   Ooi, B S ^b   Aimez, V ^c   Beauvais, J ^c   Beerens, J ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Phosistor Technologies Inc   (United States)

^c Centre de Recherche sur les Proprietes Electroniques e Materiaux Avances   (Canada)

^d UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HETEROJUNCTIONS; ION IMPLANTATION; LASERS; LIGHT ABSORPTION; LIGHT MODULATORS; PHOTOCURRENTS; POLARIZATION; TENSILE STRENGTH;

QUANTUM WELL INTERMIXING PROCESSES; RAPID THERMAL PROCESSORS (RTP);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037186115     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020151     Document Type: Article

References (7)

1. Blueshifting of InGaAsP-InP laser diodes using a low-energy ion-implantation technique: Comparison between strained and lattice-matched quantum-well structures
2. Polarization insensitive InGaAs/InGaAsP/InP amplifiers using quantum well intermixing
3. Effect of different cation and anion interdiffusion rates in disordered InGaAs/InP single quantum well
4. Effect of interdiffusion on the subband-edge structure of InGaAs/InP single quantum well
5. Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriers
6. InGaAsP/InGaAsP multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 GHz
7. Electric field screening by photogenerated holes in multiple quantum wells: A new mechanism for absorption saturation