CuInTe2 thin films synthesized by graphite box annealing of In/Cu/Te stacked elemental layers

Vacuum

Volumn 65, Issue 1, 2002, Pages 27-37

  Roy, S ^a   Guha, P ^a   Chaudhuri, S ^a   Pal, A K ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Copper indium telluride; Semiconductor; Ternary; Thin film

Indexed keywords

ANNEALING; CHARGE CARRIERS; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ENERGY GAP; GRAIN SIZE AND SHAPE; GRAPHITE; HALL EFFECT; LATTICE CONSTANTS; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

GRAPHITE BOX ANNEALING; STACKED ELEMENTAL LAYERS (SEL);

THIN FILMS;

EID: 0037176759     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(01)00391-8     Document Type: Article

References (33)