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Volumn 35, Issue 3-4, 1998, Pages 172-176

Excitation intensity dependence of the near band-edge photoluminescence spectra of CuInTe2 at 4.2 K

Author keywords

CuInTe2; Donor acceptor pairs; Excitation intensity; Free and bound excitons; Photoluminescence; Ternary semiconductor

Indexed keywords

ELECTRON EMISSION; ELECTRON TRANSITIONS; EXCITONS; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032069344     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(97)00250-4     Document Type: Article
Times cited : (12)

References (18)
  • 2
    • 0242272138 scopus 로고    scopus 로고
    • Spec. Issue. Proceedings 10th ICTMC, Stuttgart, 1996
    • J.J. Lofferski, Cryst. Res. Technol. vol. 31 (1996) p. 419, Spec. Issue. Proceedings 10th ICTMC, Stuttgart, 1996.
    • (1996) Cryst. Res. Technol. , vol.31 , pp. 419
    • Lofferski, J.J.1
  • 12
    • 77957062535 scopus 로고
    • R.K. Willardson, C.E. Beer (Eds.), Academic, NY
    • H. Bebb, E.W. Williams, in: R.K. Willardson, C.E. Beer (Eds.), Semiconductors and Semimetals, Vol. 8, Academic, NY, 1972, pp. 181ff.
    • (1972) Semiconductors and Semimetals , vol.8
    • Bebb, H.1    Williams, E.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.