Raman-active modes of porous gallium phosphide at high pressures and low temperatures

Journal of Physics Condensed Matter

Volumn 14, Issue 50, 2002, Pages 13879-13887

  Ursaki, V V ^a,b   Manjon F J ^a,c   Syassen, K ^a   Tiginyanu, I M ^b,d   Irmer, G ^e   Monecke, J ^e  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

^c UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

^d TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^e TU BERGAKADEMIE FREIBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; POROUS MATERIALS; RAMAN SPECTROSCOPY; RESONANCE; SCATTERING;

ELECTROCHEMICAL ETCHING;

GALLIUM COMPOUNDS;

EID: 0037164820     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/50/313     Document Type: Article

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