Well-driven floating gate transistors

Electronics Letters

Volumn 38, Issue 11, 2002, Pages 530-532

  Mondragon Torres A F ^a   Schneider, M C ^b   Sanchez Sinencio E ^a  

^a TEXAS A AND M UNIVERSITY   (United States)

^b FEDERAL UNIVERSITY OF SANTA CATARINA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRODES; GATES (TRANSISTOR); MODULATION; SUBSTRATES; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

FLOATING GATE (FG) TRANSISTORS;

MOSFET DEVICES;

EID: 0037161869     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020360     Document Type: Article

References (5)

1. IEEE standard definitions and characterization of floating gate semiconductor arrays
2. Flash memory cells - An overview
3. Floating-gate devices: They are not just for digital memories any more
4. Translinear circuits using subthreshold floating-gate MOS transistors