Influence of nitrogen trifluoride and nitrogen plasma treatment on the formation of hillocks during aluminum induced crystallization of a-Si:H

Thin Solid Films

Volumn 422, Issue 1-2, 2002, Pages 14-19

  Al Dhafiri, A M ^a   El Jammal, H A ^b   Al Shariah, A ^c   Naseem, H A ^b   Brown, W D ^b  

^a KING SAUD UNIVERSITY   (Saudi Arabia)

^b 3202 Bell Engineering Center   (United States)

^c JORDAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Jordan)

Author keywords

Amorphous; Metal induced crystallization; Silicon

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; ENERGY DISPERSIVE SPECTROSCOPY; EVAPORATION; MORPHOLOGY; NITROGEN; SCANNING ELECTRON MICROSCOPY; SILICON; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

PLASMA TREATMENT;

THIN FILMS;

EID: 0037147202     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00993-8     Document Type: Article

References (14)

1. Hatalis M.K., Greve D.W. IEEE Electron. Device Lett. 8:1987;361.
2. Shi Z., Wenham S.R. Prog. Photovolt. 2:1994;153.
3. Clark M.G. IEE Proc. Circuits Devices System. 141:1994;56.
4. Haque M.S., Naseem H.A., Brown W.D. J. Appl. Phys. 79:1996;7529.
5. Russell S.W., Li J., Mayer J.W. J. Appl. Phys. 70:1991;5153.
6. Hultman L., Robertson A., Hentzell H.T.G., Engstrom I., Pasras P.A. J. Appl. Phys. 62:1987;3647.
7. Bian B., Yie J., Li B., Wu Z. J. Appl. Phys. 73:1993;7402.
8. Kawazu Y., Kudo H., Onari S., Arai T. Jpn J. Appl. Phys. 29:1990;2698.
9. Haque M.S., Naseem H.A., Brown W.D. J. Appl. Phys. 75:1994;3928.
10. Mizuno S., Verma A., Lee P., Nguyen B. Thin Solid Films. 279:1996;82.
11. Mayer J.W., Lau S.S. Electronic Material Science. 1988;331 Macmillan Publishing Co, New-York, NY.
12. Konno T.J., Sinclair R. Philos. Mag. B. 66:1992;749.
13. Konno T.J., Sinclair R. Mater. Sci. Eng. A. 179/180:1994;426.
14. Nast O., Wenham S. J. Appl. Phys. 88:2000;124.