Improved gap-filling capability of fluorine-doped PECVD silicon oxide thin films

Thin Solid Films

Volumn 279, Issue 1-2, 1996, Pages 82-86

  Mizuno, Shinsuke ^a   Verma, Amrita ^b   Lee, Peter ^b   Nguyen, Bang ^b  

^a Technology Center   (Japan)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Chemical vapour deposition; Fourier transform infrared spectroscopy; Ion bombardment; Scanning electron microscopy

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ETCHING; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BOMBARDMENT; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SILICA;

GAP FILLING CAPABILITY; INTERMETAL DIELECTRIC; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TETRAETHYLORTHOSILICATE;

THIN FILMS;

EID: 0030173581     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08139-9     Document Type: Article

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