High-quality SiO2 film deposition using active reaction by oxygen radical

Vacuum

Volumn 66, Issue 3-4, 2002, Pages 317-322

  Kumagai, A ^a   Ishibashi, K ^a   Xu, Ge ^a   Tanaka, M ^a   Nogami, H ^a   Okada, O ^a  

^a Anelva Corporation ^*  (Japan)

Author keywords

Excess reaction; Gas phase reaction; Oxygen radical; Parameter dependencies; Radical shower CVD; Si OH bond; Silicon dioxide (SiO2)

Indexed keywords

CHEMICAL BONDS; DEPOSITION; LOW TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; REACTION KINETICS; SILICON COMPOUNDS; SUBSTRATES;

OXYGEN RADICALS;

SEMICONDUCTING FILMS;

EID: 0037136204     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00137-9     Document Type: Article

References (9)