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Volumn 89, Issue 25, 2002, Pages

First-order transition between a small gap semiconductor and a ferromagnetic metal in the isoelectronic alloy FeSi1-xGex

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRONIC DENSITY OF STATES; ENERGY GAP; FERROMAGNETIC MATERIALS; GROUND STATE; MAGNETIC FIELD EFFECTS;

EID: 0037122299     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/physrevlett.89.257203     Document Type: Article
Times cited : (61)

References (20)
  • 15
    • 0012577209 scopus 로고    scopus 로고
    • (to be published)
    • V. I. Anisimov et al. (to be published).
    • Anisimov, V.I.1
  • 16
    • 0012517258 scopus 로고    scopus 로고
    • note
    • Because of the neglect of spin-orbit coupling in these calculations, the Dzyaloshinskii-Moria interactions that cause the long-period spiral order in FeGe are not included and ferromagnetic order results.
  • 17
    • 85087537363 scopus 로고    scopus 로고
    • note
    • x alloys was calculated in the approximation, where in the TBLMTO calculation scheme [12] the potential parameters for nonmetallic atoms were taken as the corresponding average of the Si and Ge parameters.
  • 18
    • 0012606663 scopus 로고    scopus 로고
    • (private communication)
    • Z. Fisk (private communication).
    • Fisk, Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.