Singlet semiconductor to ferromagnetic metal transition in fesi

Physical Review Letters

Volumn 76, Issue 10, 1996, Pages 1735-1738

  Anisimov, V I ^a   Ezhov, S Yu ^a   Elfimov, S I ^a   Solovyev, I V ^a   Rice, T M ^b,c  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b LUCENT TECHNOLOGIES   (United States)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243740566     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.76.1735     Document Type: Article

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