Charge accumulation and barrier formation at grain boundaries in ZnO decorated with bismuth

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 12717-12724

  Domingos, H S ^a   Carlsson, J M ^b   Bristowe, P D ^a   Hellsing, B ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CHARGE CARRIERS; CHEMICAL BONDS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; GRAIN BOUNDARIES; INTERFACES (MATERIALS); PROBABILITY DENSITY FUNCTION; SCHOTTKY BARRIER DIODES;

BARRIER FORMATION; CHARGE ACCUMULATION; SCHOTTKY BARRIER MODEL;

ZINC OXIDE;

EID: 0037122095     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/308     Document Type: Article

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