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Volumn 14, Issue 48, 2002, Pages 13087-13094
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Trap profiling at nanocavity bands in silicon wafers by means of capacitance-voltage measurements
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE MEASUREMENT;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DEFECTS;
ELECTRIC SPACE CHARGE;
ELECTRON TRAPS;
HELIUM;
HYDROGEN;
ION BEAMS;
ION IMPLANTATION;
POSITIVE IONS;
VOLTAGE MEASUREMENT;
CAPACITANCE VOLTAGE PROFILING;
DEEP TRAP LEVELS;
NANOCAVITY BANDS;
POST IMPLANTATION ANNEALING;
TRAP PROFILING;
SILICON WAFERS;
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EID: 0037122074
PISSN: 09538984
EISSN: None
Source Type: Journal
DOI: 10.1088/0953-8984/14/48/354 Document Type: Article |
Times cited : (4)
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References (7)
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