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Volumn 14, Issue 48, 2002, Pages 13087-13094

Trap profiling at nanocavity bands in silicon wafers by means of capacitance-voltage measurements

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC SPACE CHARGE; ELECTRON TRAPS; HELIUM; HYDROGEN; ION BEAMS; ION IMPLANTATION; POSITIVE IONS; VOLTAGE MEASUREMENT;

EID: 0037122074     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/354     Document Type: Article
Times cited : (4)

References (7)
  • 7
    • 0012264523 scopus 로고    scopus 로고
    • ed C Claeys, P Rai-Choudhury and M Watanabe (Pennington, NJ: Electrochemical Society)
    • Périchaud I, Yakimov E and Martinuzzi S 2001 High Purity Silicon vol 4, ed C Claeys, P Rai-Choudhury and M Watanabe (Pennington, NJ: Electrochemical Society) pp 341-6
    • (2001) High Purity Silicon , vol.4 , pp. 341-346
    • Périchaud, I.1    Yakimov, E.2    Martinuzzi, S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.