Dislocation mobility and electronic effects in semiconductor compounds

Journal of Microscopy

Volumn 203, Issue 1, 2001, Pages 72-83

  Vanderschaeve, G ^a,b   Levade, C ^a,b   Caillard, D ^a  

^a CEMES CNRS   (France)

^b INSA   (France)

Author keywords

Dislocation glide; Semiconductors; TEM

Indexed keywords

SINGLE CRYSTALS;

DISLOCATION BEHAVIORS; DISLOCATION GLIDE; DISLOCATION MOBILITY; ELECTRONIC EFFECTS; ELEMENTARY PROCESS; IN-SITU TRANSMISSION ELECTRON MICROSCOPIES; MICROSCOPIC SCALE; REAL- TIME; SEMICONDUCTOR COMPOUNDS; TEM;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

CONFERENCE PAPER; ELECTRONICS; MATHEMATICAL ANALYSIS; MOTION; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0034923716     PISSN: 00222720     EISSN: None     Source Type: Journal    
DOI: 10.1046/j.1365-2818.2001.00901.x     Document Type: Conference Paper

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