Ab initio prediction of the structure of glide set dislocation cores in GaAs

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 12673-12680

  Beckman, S P ^a,b   Xu, X ^a,b   Specht, P ^a   Weber, E R ^a,b   Kisielowski, C ^b   Chrzan, D C ^a,b  

^a Lawrence Berkeley National Laboratory   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MECHANICAL PROPERTIES;

ELECTRO-OPTICALLY ACTIVE; OPTOELECTRONIC PROPERTIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037122019     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/302     Document Type: Article

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