Structural, electronic, and dynamical properties of Si(110) capped with a monolayer of GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 19, 2002, Pages 1953051-1953057

  Tutuncu H M ^a,b   Srivastava, G P ^c   Tse, J S ^b  

^a SAKARYA UNIVERSITY   (Turkey)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF EXETER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GALLIUM; SILICON;

AB INITIO CALCULATION; ARTICLE; CHEMICAL STRUCTURE; DYNAMICS; ELECTRONICS; ENERGY;

EID: 0037113579     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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