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Volumn 64, Issue 20, 2001, Pages 2053151-2053156
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First-principles calculations of the adsorption of a single monolayer of GaAs on Si(110)
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Author keywords
[No Author keywords available]
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Indexed keywords
ARSENIC;
GALLIUM;
SILICON;
ADSORPTION;
ARTICLE;
CALCULATION;
CHEMICAL STRUCTURE;
DENSITY;
DIFFUSION;
ENERGY;
MATHEMATICAL ANALYSIS;
MONOLAYER CULTURE;
PERIODICITY;
RELAXATION TIME;
STRUCTURE ANALYSIS;
SURFACE PROPERTY;
THEORY;
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EID: 0035890842
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: 10.1103/physrevb.64.205315 Document Type: Article |
Times cited : (6)
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References (25)
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