EPR study of shallow and deep phosphorous centers in 6H-SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 16, 2002, Pages 1652061-1652067

  Baranov, P G ^a   Ilyin, I V ^a   Mokhov, E N ^a   Von Bardeleben, H J ^b   Cantin, J L ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b SORBONNE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

PHOSPHORUS; SILICON CARBIDE;

ARTICLE; ELECTRON SPIN RESONANCE; LUMINESCENCE; MAGNETIC FIELD; MEASUREMENT; SPECTROSCOPY; TEMPERATURE DEPENDENCE; THERMOSTABILITY;

EID: 0037110186     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.165206     Document Type: Article

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