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Volumn 66, Issue 16, 2002, Pages 1613041-1613044

Single-hole tunneling into a strain-induced SiGe quantum ring

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

EID: 0037109979     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.161304     Document Type: Article
Times cited : (4)

References (27)
  • 27
    • 0043210202 scopus 로고
    • We use the six-band Luttinger-Kohn model to calculate the inplane effective-mass m* of the lowest hole subband in our coupled Si/SiGe double quantum wells, see J. M. Luttinger and W. Kohn, Phys. Rev. 97, 869 (1955).
    • (1955) Phys. Rev. , vol.97 , pp. 869
    • Luttinger, J.M.1    Kohn, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.