Self-excitation of 2D plasmons in resonant tunneling diodes

JETP Letters

Volumn 68, Issue 8, 1998, Pages 662-668

  Feiginov M N ^a   Volkov, V A ^a  

^a INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005216679     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567925     Document Type: Article

References (14)

1. H. Mizuta and T. Tanoue, The Physics and Applications of Resonant Tunneling Diodes, Cambridge University Press, 1995.
2. F. W. Sheard and G. A. Toombs, Appl. Phys. Lett. 52, 1228 (1988).
3. V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Phys. Rev. Lett. 58, 1256 (1987).
4. A. Zaslavsky, V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Appl. Phys. Lett. 53, 1408 (1988).
5. R. K. Mains, J. P. Sun, and G. I. Haddad, Appl. Phys. Lett. 55, 371 (1988).
6. H. L. Berkowitz and R. A. Lux, J. Vac. Sci. Technol. B 5, 967 (1987).
7. A. D. Martin, M. L. Lerch, P. E. Simmonds, and L. Eaves, Appl. Phys. Lett. 64, 1248 (1994).
8. C. Zhang, M. L. F. Lerch, A. D. Martin et al., Phys. Rev. Lett. 72, 3397 (1994).
9. B. A. Glavin, V. A. Kochelap, and V. V. Mitin, Phys. Rev. B 56, 13346 (1997).
10. A. V. Chaplik, Zh. Éksp. Teor. Fiz. 62, 746 (1972) [Sov. Phys. JETP 35, 395 (1972)].
11. S. Luryi, Appl. Phys. Lett. 47, 490 (1985).
12. E. R. Brown, T. C. L. G. Sollner, W. D. Goodhue, and C. D. Parker, Appl. Phys. Lett. 50, 83 (1987).
13. M. L. Leadbeater, E. S. Alves, F. W. Sheard et al., J. Phys.: Condens. Matter 1, 10605 (1989).
14. M. N. Feiginov and V. A. Volkov, in Abstracts of the 24th International Conference on the Physics of Semiconductors, Jerusalem, Israel, Tu-P101 (1998).