Effects of substrate temperature on thermoelectric properties of amorphous Si/Ge thin films

International Conference on Thermoelectrics, ICT, Proceedings

Volumn , Issue , 2001, Pages 348-351

  Lee, Sang Min ^a   Okamoto, Yoichi ^a   Kawahara, Toshio ^a   Morimoto, Jun ^a  

^a NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DEPOSITION; ELECTRIC POWER FACTOR; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS; THERMOELECTRICITY; ULTRAHIGH VACUUM;

ELECTRICAL ENERGY CONVERSION EFFICIENCY; SUBSTRATE TEMPERATURE; VACUUM DEPOSITION;

SEMICONDUCTOR SUPERLATTICES;

EID: 0035707124     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Anomalously large thermoelectric power of the Si and Au doped Ge superlattice thin film
2. The study for the origin of anomalously large thermoelectric power of the Si/Ge superlattice thin film
3. Effect of quantum-well structures on the thermoelectric figure of merit