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Journal of Applied Physics

Volumn 92, Issue 2, 2002, Pages 920-926

Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well

(3) Wang, Y C a Tyan, S L b Juang, Y D c

a DEPARTMENT OF PHYSICS (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

c Department of Special Education (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP TRANSITION; BUILT-IN ELECTRIC FIELDS; BULK STRUCTURE; CONDUCTION SUBBANDS; ETCHING DEPTH; ETCHING PROCESS; ETCHING RATE; EXCITON TRANSITION ENERGY; GAP TRANSITION; GROUND STATE TRANSITION; INGAAS/INALAS; INTER-BAND TRANSITION; KRAMERS-KRONIG TRANSFORMATION; LATTICE-MATCHED; PHASE SPECTRA; PHASE-SHIFT ANALYSIS; PHOTOREFLECTANCE; PL SPECTRA; SINGLE QUANTUM WELL; SINGLE QUANTUM WELL STRUCTURES; SUBBANDS; TRANSITION ENERGY; TWO-RAY MODEL;

ATOMIC FORCE MICROSCOPY; GAS SOURCE MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS;

ETCHING;

EID: 0037100758 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1487906 Document Type: Article

Times cited : (15)

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