Bias dependence of magnetoresistance in Fe-Al 2O 3 granular thin films

Journal of Applied Physics

Volumn 91, Issue 12, 2002, Pages 9909-9914

  Boff, M A S ^a   Geshev, J ^a   Schmidt, J E ^a   Flores, W H ^b   Antunes, A B ^a   Gusmao M A ^a   Teixeira, S R ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; BIAS DEPENDENCE; BIAS POTENTIAL; DC CURRENT; ELECTRONIC CHARACTERISTICS; GRANULAR THIN FILMS; LOW RESISTIVITY; MAGNETOTRANSPORT BEHAVIOR; NONOHMIC BEHAVIOR; TRANSPORT MECHANISM; TUNNELING MAGNETORESISTANCE; TUNNELING PATHS; VARIABLE RANGE HOPPING;

ELECTRIC RESISTANCE; ELECTRONIC PROPERTIES; MAGNETOELECTRONICS; THIN FILMS;

MAGNETORESISTANCE;

EID: 0037097911     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1479481     Document Type: Article

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