Magnetoresistance of insulating amorphous NixSi1-x films exhibiting Mott variable-range hopping laws

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 9, 2001, Pages

  Rosenbaum, Ralph ^a   Murphy, Tim ^b   Palm, Eric ^b   Hannahs, Scott ^b   Brandt, Bruce ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b FLORIDA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HELIUM; METAL COMPLEX; NICKEL COMPLEX; SILICON DERIVATIVE;

ARTICLE; CONDUCTANCE; ELECTRIC RESISTANCE; FILM; HIGH TEMPERATURE PROCEDURES; MAGNETIC FIELD; MAGNETISM; MATHEMATICAL MODEL; SEMICONDUCTOR;

EID: 4344603295     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.094426     Document Type: Article

References (31)

1. N. F. Mott, J. Non-Cryst. Solids 1, 1 (1968).
2. R. Rosenbaum, N. V. Lien, M. R. Graham, and M. Witcomb, J. Phys.: Condens. Matter 9, 6247 (1997).
3. M. Pollak, Discuss. Faraday Soc. 50, 13 (1970).
4. L. V. Nguyen and R. Rosenbaum, Phys. Rev. B, 56, 14 960 (1997).
5. R. Rosenbaum, H. Castro, and W. Schoepe, in Proceedings of Research in High Magnetic Fields–2000 (RHMF-2000) [Physica B (to be published)].
6. M. Benzaquen, D. Walsh, and K. Mazuruk, Phys. Rev. B, 38, 10 933 (1988).
7. G. Biskupski, Philos. Mag. B 65, 723 (1992).
8. N. V. Agrinskaya, J. Cryst. Growth 138, 493 (1994).
9. N. V. Agrinskaya, V. I. Kozub, and D. V. Shamshur, Zh. Eksp. Teor. Fiz. 107, 2063 (1995) [JETP 80, 1142 (1995)].
10. C. R. Wang, H. S. Kuan, S. T. Lin, and Y. Y. Chen, J. Phys. Soc. Jpn. 67, 2383 (1998).
11. C. R. Wang, Z. Y. Su, and S. T. Lin, Solid State Commun. 108, 681 (1998).
12. P. Dai, J. Friedman, and M. P. Sarachik, Phys. Rev. B, 48, 4875 (1993).
13. A. G. Zabrodskii and K. N. Zinov’eva, Zh. Eksp. Teor. Fiz. 86, 727 (1984) [Sov. Phys. JETP 59, 425 (1984)].
14. H. Tokumoto, R. Mansfield, and M. J. Lea, Philos. Mag. B 46, 93 (1982).
15. B. I. Shklovskii, Pis’ma Zh. Eksp. Teor. Fiz. 36, 43 (1982) [JETP Lett. 36, 51 (1982)].
16. B. I. Shklovskii, Fiz. Tekh. Poluprovodn. 17, 2055 (1983) [Sov. Phys. Semicond. 17, 1311 (1983)].
17. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984), p. 202.
18. W. Schoepe, Z. Phys. B 71, 455 (1988).
19. A. S. Ioselevich, Fiz. Tekh. Poluprovodn. 15, 2373 (1981) [Sov. Phys. Semicond. 15, 1378 (1981)].
20. V. L. Nguyen, B. Z. Spivak, and B. I. Shklovskii, Pis’ma Zh. Eksp. Teor. Fiz. 41, 35 (1985) [JETP Lett. 41, 42 (1985)].
21. V. L. Nguyen, B. Z. Spivak, and B. I. Shklovskii, Zh. Eksp. Teor. Fiz. 89, 1770 (1985) [Sov. Phys. JETP 62, 1021 (1985)].
22. U. Sivan, O. Entin-Wohlman, and Y. Imry, Phys. Rev. Lett. 60, 1566 (1988).
23. M. E. Raikh, Solid State Commun. 75, 935 (1990).
24. M. E. Raikh, J. Czingon, Qiu-yi Ye, F. Koch, W. Schoepe, and K. Ploog, Phys. Rev. B, 45, 6015 (1992).
25. W. Schirmacher, Phys. Rev. B, 41, 2461 (1990).
26. H. T. Fritzsche and W. Schirmacher, Europhys. Lett. 21, 67 (1993).
27. W. Schirmacher and R. Kempter, in Proceedings of the Fifth International Conference on Hopping and Related Phenomena, Glasgow, Scotland, 1993, edited by C. J. Adkins, A. R. Long, and J. A. McInnes (World Scientific, Singapore, 1994), p. 31.
28. B. I. Shklovskii and B. Z. Spivak, in Hopping Transport in Solids, edited by M. Pollak and B. Shklovskii (Elsevier Science, Amsterdam, 1991), p. 271.
29. C. Gignoux, C. Berger, G. Fourcaudot, J. C. Grieco, and H. Rakoto, Europhys. Lett. 39, 171 (1997).
30. U. Sivan (private communication).
31. G. Bergmann, Phys. Rep. 107, 30 (1984).