Barrier dependence of magnetoresistance enhancement in nano-oxide added spin valves

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 8563-8565

  Li, Kebin ^a   Wu, Yihong ^a,b   Qiu, Jinjun ^a   Chong, Towchong ^a,b  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BEST CHOICE; BOTTOM SPIN VALVES; CAPPING LAYER; DUAL SPIN VALVES; EXCHANGE COUPLING FIELDS; FERROMAGNETIC LAYERS; INTERLAYER COUPLING FIELDS; MAGNETORESISTANCE RATIO; NANO-OXIDES; OPTIMUM CONDITIONS; OVERALL PROPERTIES; OXIDE LAYER; SPIN VALVE; TOP SPIN VALVES;

ELECTRIC RESISTANCE; GIANT MAGNETORESISTANCE; IRIDIUM COMPOUNDS; MAGNETIC DEVICES;

ALUMINUM;

EID: 0037094535     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1447295     Document Type: Article

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