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Journal of Modern Optics

Volumn 49, Issue 5-6, 2002, Pages 719-730

Linear and nonlinear optical properties of plasma-enhanced chemical-vapour deposition grown silicon nanocrystals

(7) Prakash, G Vijaya a Cazzanelli, M a Gaburro, Z a Pavesi, L a Iacona, F b Franzo G c Priolo, F c

a UNIVERSITY OF TRENTO (Italy)

b CNR IMETEM (Italy)

c UNIVERSITY OF CATANIA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ENERGY GAP; GRAIN SIZE AND SHAPE; LIGHT ABSORPTION; LIGHT EMISSION; MULTIPHOTON PROCESSES; NONLINEAR OPTICS; OPTICAL PROPERTIES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM OPTICS; REFRACTIVE INDEX; SEMICONDUCTING SILICON;

LINEAR ABSORPTION COEFFICIENT; LINEAR OPTICAL PROPERTY; OPTICAL BAND GAP; THIRD-ORDER NONLINEAR SUSCEPTIBILITY; TWO-PHOTON ABSORPTION; Z-SCAN METHOD;

NANOSTRUCTURED MATERIALS;

EID: 0037091945 PISSN: 09500340 EISSN: None Source Type: Journal
DOI: 10.1080/09500340110099199 Document Type: Conference Paper

Times cited : (66)

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