Improvement of the crystallinity of GaAs epitaxial layers grown on Si substrates assisted by electron beam irradiation

Thin Solid Films

Volumn 279, Issue 1-2, 1996, Pages 14-16

  Kang, T W ^a   Woo, Y D ^b   Kim, T W ^c  

^a Dongguk University   (South Korea)

^b Woosuk University   (South Korea)

^c Kwangwoon University   (South Korea)

Author keywords

Gallium arsenide; Molecular beam epitaxy; Optical properties; Silicon

Indexed keywords

BAND STRUCTURE; CRYSTAL STRUCTURE; ELECTRON BEAMS; IRRADIATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

CONDUCTION BAND; CRYSTALLINITY; ELECTRON BEAM IRRADIATION; LONGITUDINAL OPTICAL PHONON FREQUENCY SHIFTS; PHOTOLUMINESCENCE SPECTROSCOPY;

EPITAXIAL GROWTH;

EID: 0030168922     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)06681-0     Document Type: Article

References (21)

1. F. Capasso, Physcis of Quantum Electron Devices, Springer-Verlag, Heidelber, 1990.
2. C. Weisbuch and B. Vinter, Quantum Semiconductor Structures, Academic Press, London, 1991.
3. T.L. Lin, L. Sadwick, K.L. Wang, Y.C. Kao, R. Hull, C.W. Nieh, D.N. Jamieson and J.K. Liu, Appl. Phys. Lett., 51 (1987) 814.
4. W.I. Wang, Appl. Phys. Lett., 44 (1984) 1149.
5. G.H. Mertze, H.K. Choi and B.Y. Tsaur, Appl. Phys. Lett., 45 (1984) 1107.
6. P.N. Uppal and H. Kroemer, J. Appl. Phys., 58 (1985) 2195.
7. M. Yamaguichi, M. Sugo and Y. Ithoh, Appl. Phys. Lett., 54 (1989) 2568.
8. M. Akiyama, Y. Kawarada and K. Kaminishi, Jpn. J. Appl. Phys., 23 (1984) L843.
9. N. Chand, R. People, P.A. Baiocchi, K.W. Wechtant and A.Y. Cho, Appl. Phys. Lett., 49 (1986) 815.
10. A. Freundlich, A. Leycuras, J.C. Grenet, C. Verie and P.V. Huong, Appl. Phys. Lett., 51 (1987) 1352.
11. J.Y. Leem, D.Y. Kim, T.W. Kang, J.J. Lee and I.E. Oh, Appl. Phys. Lett., 57 (1990) 2228.
12. D.Y. Kim, T.W. Kang, J.Y. Leem and T.W. Kim, J. Appl. Phys., 74 (1993) 4268.
13. T. Egawa, T. Jimbo, Y. Hasegawa and M. Umeno, Appl. Phys. Lett., 64 (1994) 1401.
14. R. Fisher, H. Morkoc, D.A. Neuman, H. Zabel, C. Choli, N. Dtsuka, M. Longerbone and L.P. Erickson, J. Appl. Phys., 60 (1986) 1640.
15. W. Stoltz, F.E.G. Gumaraes and K. Ploog, J. Appl. Phys., 63 (1988) 492.
16. W.M. Duncan, J.W. Lee, R.J. Matyl and H.Y. Liu, J. Appl. Phys., 59 (1986) 2161.
17. Y. Fukuda, Y. Kadoatand Y. Ohmachi, Jpn. J. Appl. Phys., 27 (1988) 485.
18. Y. Chen, A. Freundlich, H. Kamada and G. Neu, Appl Phys. Lett., 54 (1989) 45.
19. S. Zemon, S.K. Shastry, P. Norris, C. Jagannath and G. Lambert, Solid State Commun., 58 (1986) 457.
20. N. Chand, R. Fisher, A.M. Sergent, D.V. Lang, S.J. Pearton and A.Y. Cho, Appl. Phys. Lett., 51 (1987) 1013.
21. B.A. Weinstein and M. Cardona, Phys. Rev. B, 5 (1972) 3120.