Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3931-3933

  Deng, A H ^a   Shan, Y Y ^a   Fung, S ^a   Beling, C D ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ARRHENIUS ANALYSIS; DEEP LEVEL; DEEP-LEVEL DEFECTS; DEFECT CHARACTERIZATION; DEFECT LEVELS; GAAS; POSITRON ANNIHILATION LIFETIMES; TEMPERATURE DEPENDENT; TRANSIENT STUDIES;

DEFECTS; ELECTRONS; POSITRONS; TRANSIENTS;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 0037087427     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436551     Document Type: Article

References (7)

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2. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors: Defect Studies, Springer Series in Solid-state Sciences (Springer, Berlin, 1999), Vol. 127, pp. 171-1873.
3. Y. Y. Shan, C. C. Ling, A. H. Deng, B. K. Panda, C. D. Beling, and S. Fung, Phys. Rev. B 55, 7624 (1997).
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6. M. Kaminska, M. Skowronski, and W. Kuszho, Phys. Rev. Lett. 55, 2204 (1985).
7. F. D. Auret, A. W. R. Leitch, and J. S. Vermaak, Appl. Phys. A: Solids Surf. 59, 158 (1986).