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Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 12, 2002, Pages 1213011-1213014

Experimental study of hot-electron inelastic scattering rate in p-type InGaAs

(5) Sicault, D a Teissier, R a Pardo, F a Pelouard, J L a Mollot, F b

a CNRS (France)

b Institut d'Electronique et Microlectronique du Nord Cité Scientifique (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; INDIUM GALLIUM ARSENIDE; UNCLASSIFIED DRUG;

ARTICLE; DISPERSION; ELASTICITY; ELECTROLUMINESCENCE SPECTROSCOPY; ELECTRON; ELECTRONICS; ENERGY; MOLECULAR INTERACTION; POROSITY; SEMICONDUCTOR; SPECTROSCOPY; TEMPERATURE DEPENDENCE;

EID: 0037085843 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (9)

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