Single-walled carbon nanotube growth on silicon substrates using nanoparticle catalysts

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 1 A/B, 2002, Pages

  Homma, Yoshikazu ^a   Yamashita, Takayuki ^a,b   Finnie, Paul ^a,d   Tomita, Masato ^a,c,e   Ogino, Toshio ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b TOKAI UNIVERSITY   (Japan)

^c NTT CORPORATION   (Japan)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^e Worldwide Product Engineering   (Japan)

Author keywords

Carbon nanotubes; Chemical vapor deposition; Nanoparticle catalyst

Indexed keywords

CATALYSTS; CHEMICAL VAPOR DEPOSITION; HIGH TEMPERATURE EFFECTS; IRON OXIDES; METHANE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

NANOPARTICLE CATALYSTS; SILICIDATION; SINGLE-WALLED NANOTUBES (SWNT);

CARBON NANOTUBES;

EID: 0037082092     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l89     Document Type: Article

References (12)