Transverse magnetic and transverse electric polarized inter-subband absorption and photoconductivity in p-type SiGe quantum wells

Applied Physics Letters

Volumn 68, Issue 25, 1996, Pages 3611-3613

  Fromherz, T ^a   Kruck, P ^a   Helm, M ^a   Bauer, G ^a   Nutzel J F ^b   Abstreiter, G ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTROMAGNETIC FIELDS; ELECTRON TRANSITIONS; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; PHOTOCONDUCTIVITY; POLARIZATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

LUTTINGER-KOHN CALCULATIONS; SILICON GERMANIDE; TRANSVERSE ELECTRIC POLARIZED ABSORPTION; TRANSVERSE MAGNETIC POLARIZED ABSORPTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030168130     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115746     Document Type: Article

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