L-band DFB laser diodes with output power of 106 mW at 1625 nm

Electronics Letters

Volumn 38, Issue 21, 2002, Pages 1258-1259

  Kise, T ^a   Hiraiwa, K ^a   Koizumi, S ^a   Yamanaka, N ^a   Funabashi, M ^a   Kasukawa, A ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; FEEDBACK; OPTICAL COMMUNICATION; WAVELENGTH DIVISION MULTIPLEXING;

OPTICAL CONFINEMENT;

SEMICONDUCTOR LASERS;

EID: 0037057269     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020881     Document Type: Article

References (6)

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2. Chen, T.R., Hsin, W., and Bar-Chaim, N.: 'Very high power InGaAsP/InP distributed feedback lasers at 1550 nm wavelength', Appl. Phys. Lett., 1998, 72, pp. 1269-1271.
3. Inaba, Y., Nakayama, H., Kito, M., Ishino, M., and Ito, K.: 'High-power 1.55-μm mass-transport-grating DFB lasers for externally modulated systems', IEEE J. Sel. Top. Quantum Electron., 2001, 7, pp. 152-158.
4. Funabashi, M., Hiraiwa, K., Koizumi, S., Yamanaka, N., and Kasukawa, A.: 'Low operating current 40 mW PM fiber coupled DFB laser modules for externally modulated 1550 nm WDM sources' ECOC, Tech. Dig., 2001, Paper Tu.B.1.3., pp. 122-123, Amsterdam, The Netherlands.
5. Kise, T., Hiraiwa, K., Koizumi, S., Yamanaka, N., Funabashi, M., and Kasukawa, A.: 'Over 100 mW high power operation of 1625 nm L-band DFB laser diodes'. Proc. 14th IEEE LEOS Annual Mtg, 2001, Vol. 2, pp. 802-803.
6. Zou, Y., Osinski, J.S., Grodzinski, P., Dapkus, P.D., Rideout, W.C., Sharfin, W.F., Schlafer, J., and Crawford, F.D.: 'Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductor lasers', IEEE J. Quantum. Electron., 1993, 29, pp. 1565-1575.