High-power 1.55-μm mass-transport-grating DFB lasers for externally modulated systems

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 2, 2001, Pages 152-158

  Inaba, Y ^a   Nakayama, H ^a   Kito, M ^a   Ishino, M ^a   Itoh, K ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Indium materials devices; Optical communication system; Quantum well lasers; Semiconductor lasers; Waveguide lasers

Indexed keywords

DIFFRACTION GRATINGS; ELECTRIC CURRENTS; LASER MODES; LIGHT MODULATION; OPTICAL COMMUNICATION; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; WAVEGUIDES;

HOLOGRAPHIC EXPOSURE TECHNIQUE; MASS-TRANSPORT-GRATING STRUCTURE; NARROW SPECTRAL LINEWIDTH; WAVEGUIDE LASER;

DISTRIBUTED FEEDBACK LASERS;

EID: 0035263977     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.954124     Document Type: Article

References (13)

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5. High-power, wide-temperature range operation of 1.3 μm complex-coupled DFB lasers with automatically buried absorptive grating
6. Formation of InAsP layer on corrugated InP substrate by MOVPE for buried grating of DFB lasers
7. Gain-coupled DFB lasers versus index-coupled and phase-shifted DFB lasers: A comparison based on spatial hole burning corrected yield
8. Coupling coefficients for distributed feedback single- and double-heterostructure diode layers
9. Novel method for high resolution measurement of laser output spectrum
10. Spectral linewidth rebroadening in MQW-DFB LD's caused by spontaneous emission noise in SCH/Barrier layers
11. Linewidth broadening of SCH quantum-well lasers enhanced by carrier fluctuation in optical guiding layers
12. Reduction of linewidth enhancement factor in InGaAsP-InP modulation-doped strained multiple-quantum-well lasers
13. Linewidth enhancement factor in InGaAsP/InP modulation-doped strained multiple-quantum-well lasers