The growth and electrical properties of silicon on GaAs(110) studied by scanning tunneling microscopy and scanning tunneling spectroscopy

Journal of Applied Physics

Volumn 86, Issue 10, 1999, Pages 5636-5641

  Dunstan, P R ^a   Wilks, S P ^a   Teng, K S ^a   Pritchard, M A ^a   Williams, R H ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001011106     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371573     Document Type: Article

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