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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4653-4656

Analysis of interface microstructure evolution in Separation by IMplanted OXygen (SIMOX) wafers

(2) Ishiyama, Toshihiko a,c Omura, Yasuhisa a,b

a NTT CORPORATION (Japan)

b KANSAI UNIVERSITY (Japan)

c NTT Advance Technology Corporation (Japan)

Author keywords

Annealing; Diffusion; Flatness; Interface; Morphology; SIMOX

Indexed keywords

ANNEALING; COALESCENCE; CRYSTAL MICROSTRUCTURE; DIFFUSION; INTERFACES (MATERIALS); ION IMPLANTATION; OXYGEN; REACTION KINETICS; THERMAL EFFECTS;

SEPARATION BY IMPLANTED OXYGEN (SIMOX) TECHNOLOGY;

SILICON WAFERS;

EID: 0034227290 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.4653 Document Type: Article

Times cited : (10)

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