Sign inversion of the Stark shift in single non-abrupt GaAs/AlxGa1-xAs quantum wells

Journal of Physics Condensed Matter

Volumn 11, Issue 29, 1999, Pages 5593-5602

  Ferreira, E C ^a   Da Costa, J A P ^a   Freire, J A K ^b   Farias, G A ^b   Freire, V N ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO NORTE   (Brazil)

^b FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; GROUND STATE; INTERFACES (MATERIALS); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

QUANTUM-CONFINED STARK SHIFT; SINGLE NON-ABRUPT QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032592023     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/29/306     Document Type: Article

References (24)

1. Herman M A, Bimberg D and Christen J 1991 J. Appl. Phys. 70 R1
2. Johnson M B, Maier U, Meier H-P and Salemink H W M 1993 Appl. Phys. Lett. 63 1273
3. Kopf R F, Schubert E F, Harris T D and Becker R S 1991 Appl. Phys. Lett. 58 631
4. Braun W, Trampert A, Däweritz L and Ploog K H 1997 Phys. Rev. B 55 1689 and references therein
5. Miller D A B, Chemla D S, Damen T C, Gossard A C, Wiegmann W, Wood T H and Burrus C A 1984 Phys. Rev. Lett. 53 2173
6. Mendez E E and Agulló-Rueda F 1989 J. Lumin. 44 223 and references therein
7. Harwit A and Harris J S Jr 1987 Appl. Phys. Lett. 50 685
8. Li E H, Chan K S, Weiss B L and Micallef J 1993 Appl. Phys. Lett. 63 533
9. Freire V N, Auto M M and Farias G A 1992 Superlatt. Microstruct. 11 17
10. Ando Y and Itoh T 1992 J. Appl. Phys. 61 1497
11. A linear variation of the aluminium molar fraction is very close to an error function profile, which it is usually considered as when diffusion is taken into account.
12. Adachi S 1985 J. Appl. Phys. 58 R1
13. Proctor M, Oelgart G, Rhan H and Reinhart F-K 1994 Appl. Phys. Lett. 64 3154
14. Schulman J N 1983 J. Vac. Sci. Technol. B 1 644
15. Jiang H X and Lin J Y 1987 Superlatt. Microstruct. 3 689
16. Nelson D F, Miller R C, W. Tu C W and Sputz S K 1987 Phys. Rev. B 36 8063
17. Li T and Kuhn K J 1993 Phys. Rev. B 47 12 760
18. BenDaniel D J and Duke C B 1966 Phys. Rev. 152 683
19. Delalande C and Bastard G 1987 Semiconductor Interfaces: Formation and Properties ed G Le Lay, J Derrien and N Boccara (Berlin: Springer) p 340
20. Ourmazd A, Taylor D W, Cunningham J and Tu C W 1989 Phys. Rev. Lett. 26 933
21. Albrektsen O, Arent D J, Meier H P and Salemink H W M 1990 Appl. Phys. Lett. 57 31
22. Matsuura M and Kamizato T 1986 Phys. Rev. B 33 8385
23. Xie H J, Chen C Y and Liang S D 1995 Phys. Rev. B 52 1776
24. Yang G M, Seo K S and Choe B-D 1994 Appl. Phys. Lett. 65 3224