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Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 422-427

Evolution of stress and strain relaxation of Ge and SiGe alloy films on Si(0 0 1)

(3) Koch, R a Wedler, G b Wassermann, B b

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b FREIE UNIVERSITÄT BERLIN (Germany)

Author keywords

Atomic force microscopy; Epitaxy; Germanium; Intrinsic stress; Quantum dots; Semiconducting films; Silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; CANTILEVER BEAMS; GERMANIUM; OPTOELECTRONIC DEVICES; PERCOLATION (SOLID STATE); SILICON; SILICON ALLOYS; STRAIN; STRESS RELAXATION; SUBSTRATES; TRANSISTORS;

STRAIN RELAXATION;

METALLIC FILMS;

EID: 0037042028 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(01)00909-6 Document Type: Article

Times cited : (3)

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