Dependence of the activation energies on the well width in CdTe/ZnTe strained single quantum wells

Solid State Communications

Volumn 121, Issue 9-10, 2002, Pages 571-574

  Jang, M S ^a   Oh, S H ^a   Choi, J C ^a   Park, H L ^a   Choo, D C ^b   Jung, M ^b   Lee, D U ^b   Kim, T W ^b  

^a Yonsei University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

A. Nanostructures; D. Electronic states; D. Optical properties

Indexed keywords

ACTIVATION ENERGY; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS;

ENVELOPE FUNCTION APPROXIMATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037034755     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00473-2     Document Type: Article

References (16)