High-power ridge-waveguide distributed-feedback lasers emitting at 860 nm

Electronics Letters

Volumn 38, Issue 25, 2002, Pages 1676-1677

  Wenzel, H ^a   Braun, M ^a   Fricke, J ^a   Klehr, A ^a   Knauer, A ^a   Ressel, P ^a   Erbert, G ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION GRATINGS; HIGH POWER LASERS; LIGHT EMISSION; MULTILAYERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

GALLIUM ARSENIDE PHOSPHIDE; INDIUM GALLIUM PHOSPHIDE;

DISTRIBUTED FEEDBACK LASERS;

EID: 0037028260     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20021145     Document Type: Article

References (3)

1. MAJOR, J.S., O'BRIAN, S., GULGAZOV, V., WELCH, D.F., and LANG, R.J.: 'High-power singlemode AlGaAs distributed Bragg reflector laser diodes operating at 856 nm', Electron. Lett., 1994, 30, pp. 496-49
2. MENNA, R., KOMISSAROV, A., MAIOROV, M., KHALFIN, V., TSEKTOU, A., TODOROV, S., CONNOLLY, J., and GARBUZOV, D.: 'High power single spatial and longitudinal mode 1310 nm InGaAsP/InP Lasers', 27th ECOC, Amsterdam, 2001, Tu.B.1.6
3. BEISTER, G., BUGGE, F., ERBERT, G., MAEGE, J., RESSEL, P., SEBASTIAN, J., THIES, A., and WENZEL, H.: 'Monomode emission at 350 mW and high reliability with InGaAs/AlGaAs (λ = 1020 nm) ridge waveguide laser diodes', Electron. Lett., 1998, 34, pp. 778-779.