An improved equivalent circuit model for predicting the transmission characteristics of spiral inductors on GaAs substrates

Microwave and Optical Technology Letters

Volumn 34, Issue 1, 2002, Pages 35-37

  Pan, S J ^a   Li, L W ^a   Yin, W Y ^a   Leong, M S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Equivalent circuit model; Spiral inductor; Transmission characteristics

Indexed keywords

EQUIVALENT CIRCUITS; LUMPED PARAMETER NETWORKS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

SPIRAL INDUCTORS;

ELECTRIC INDUCTORS;

EID: 0037025026     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.10365     Document Type: Article

References (3)

1. High Q inductors for wireless applications in a complementary silicon bipolar process
2. Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/ BiCMOS technology
3. Analysis, design, and optimization of spiral inductors and transformers for Si RFICs