Investigation on preparation and physical properties of LPCVD SixOyNz thin films and nanocrystalline Si/SixOyNz superlattices for Si-based light emitting devices

Materials Science and Engineering C

Volumn 19, Issue 1-2, 2002, Pages 225-228

  Modreanu, M ^a,c   Gartner, Mariuca ^b   Cristea, Dana ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF PHYSICAL CHEMISTRY   (Romania)

^c NONE   (Romania)

Author keywords

AFM; Ellipsometry; LPCVD; Polysilicon; Silicon oxynitride; XRD

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

NANOCRYSTALLINE SILICON; SPECTROSCOPIC ELLIPSOMETRY (SE);

THIN FILMS;

FILM; NANOCRYSTAL;

EID: 0037006027     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(01)00471-4     Document Type: Article

References (19)

1. Structure and electronic properties of amorphous insulators in silicon MIS structures