20-nm resolution of electron lithography for the nano-devices on ultrathin SOI film

Materials Science and Engineering C

Volumn 19, Issue 1-2, 2002, Pages 189-192

  Nastaushev, Y V ^a   Gavrilova, T ^a   Kachanova, M ^a   Nenasheva, L ^a   Kolosanov, V ^a   Naumova, O V ^a   Popov, V P ^a   Aseev, A L ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

E beam lithography; Nanodevices; PMMA; SET; SOI; Ultimate resolution

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSITIONS; ETCHING; NANOSTRUCTURED MATERIALS;

PATTERN GENERATOR;

THIN FILMS;

NANOTECHNOLOGY;

EID: 0037005915     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0928-4931(01)00456-8     Document Type: Article

References (15)

1. Nanofabrication below 10 nm on organic and inorganic resists