Influence of sintering temperature on the properties of high Tc bismuth layer structure ceramics

Materials Science and Engineering: B

Volumn 88, Issue 1, 2002, Pages 62-67

  Yan, Haixue ^a   Li, Chengen ^a   Zhou, Jiaguang ^a   Zhu, Weimin ^a   He, Lianxin ^a   Song, Yuxin ^a   Yu, Youhua ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Bismuth layer structure; Piezoelectric ceramics; Properties; Sintering temperature

Indexed keywords

ANISOTROPY; BISMUTH COMPOUNDS; ELECTRIC CONDUCTIVITY; GRAIN GROWTH; PIEZOELECTRIC MATERIALS; SCANNING ELECTRON MICROSCOPY; SINTERING; SUPERCONDUCTING TRANSITION TEMPERATURE; THERMODYNAMIC STABILITY; X RAY POWDER DIFFRACTION;

PIEZOELECTRIC CERAMICS;

CERAMIC MATERIALS;

EID: 0037005672     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00752-8     Document Type: Article

References (19)