Strip thickness, flow rate of hydrogen, surface-energy-induced selective growth kinetics and final texture in thin-gauged 3%Si-Fe alloy system

Materials Science Forum

Volumn 408-412, Issue II, 2002, Pages 1287-1292

  Kim, S B ^a   Choi, Y S ^a   Cho, S S ^a   Chai, K H ^a   Oh, J M ^a   Heo, N H ^a  

^a Korea Electric Power Research Institute (KEPRI)   (South Korea)

Author keywords

3 Si Fe; Segregation; Selective Growth Kinetics; Sulfur

Indexed keywords

ADSORPTION; ANNEALING; CRYSTALLOGRAPHY; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HYDROGEN; INTERFACIAL ENERGY; RECRYSTALLIZATION (METALLURGY); SEGREGATION (METALLOGRAPHY); TEXTURES;

ISOTHERMAL ANNEALING;

SILICON ALLOYS;

EID: 0037004275     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.408-412.1287     Document Type: Conference Paper

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