Correlation between interfacial segragation and surface-energy-induced selective grain growth in 3% silicon-iron alloy

Acta Materialia

Volumn 48, Issue 11, 2000, Pages 2901-2910

  Heo, N H ^a   Chai, K H ^b   Na, J G ^b  

^a Korea Electric Power Research Institute (KEPRI)   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; COLD ROLLING; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HYDROGEN SULFIDE; INTERFACIAL ENERGY; REDUCTION; SEGREGATION (METALLOGRAPHY); SULFUR; TEXTURES; X RAY DIFFRACTION ANALYSIS;

INTERFACIAL SEGREGATION KINETICS; SILICON IRON ALLOY;

SILICON ALLOYS;

EID: 0033726452     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-6454(00)00084-7     Document Type: Article

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