Design, microfabrication, and application of novel x-ray optics

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4783, Issue , 2002, Pages 139-147

  Finkelstein, K D ^a   Abbamonte, P ^a   Kostroun, V ^b  

^a Department of Population Medicine and Diagnostic Sciences   (United States)

^b Department of Materials Science and Engineering   (United States)

Author keywords

Narrow bandwidth; Reactive ion etching; Sagittal focusing; X ray optics

Indexed keywords

ASPECT RATIO; BRAGG CELLS; CRYSTALS; DIFFRACTION GRATINGS; DYNAMICS; FOCUSING; OPTICAL DESIGN; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SYNCHROTRON RADIATION;

BRAGG DIFFRACTION FOCUSING; ENERGY SCANNING MONOCHROMATOR; MICROFABRICATION; OPTICAL PERFORMANCE; SAGITTAL FOCUSING;

X RAY OPTICS;

EID: 0036980519     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.451022     Document Type: Conference Paper

References (11)

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10. The beam can be recompressed without significant intensity reduction if the fourth crystal has a reverse asymmetry relative to the first crystal. We are fabricating asymmetric sagittal focusing crystals to explore how focus, asymmetry, and throughput are related.
11. This sagittal focusing optic was made following the procedure of reference 1. The starting wafer is double side polished float zone silicon with: resistivity > 1000 Ohm-cm, diameter 101mm, and thickness 920 microns. Trenches are 250 micron wide, on 500 micron centers. The trenches are etched to average depth 817 microns to form the thin bending web. We have not found a reliable, non-destructive method to measure trench depth, but an estimate of depth uniformity is made by measurements in a perimeter trench surrounding the optic. These data indicate a variation in web thickness along the triangle altitude with a minimum > 70 microns closest to the base, approximately 100 microns nearest the apex, and a central portion thickness about 120 microns.