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Volumn 12, Issue 12, 2002, Pages 500-501

A SiGe MMIC 6-bit PIN diode phase shifter

Author keywords

Monolithic microwave integrated circuit (MMIC); Phase shifter; PIN diode; Silicon Germanium (SiGe)

Indexed keywords

BIPOLAR INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; FREQUENCIES; INSERTION LOSSES; PHASE SHIFT; PHASE SHIFTERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SUBSTRATES;

EID: 0036964690     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2002.805534     Document Type: Letter
Times cited : (35)

References (6)
  • 1
    • 0029276715 scopus 로고
    • Si/SiGe epitaxial-base transistors-Part I: Materials, physics, and circuits
    • Mar.
    • D. L. Harame et al., "Si/SiGe epitaxial-base transistors-Part I: Materials, physics, and circuits," IEEE Trans. Electron Devices, vol. 42, pp. 455-468, Mar. 1995.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 455-468
    • Harame, D.L.1
  • 2
    • 0029274349 scopus 로고
    • Si/SiGe epitaxial-base transistors-Part II: Process integration and analog applications
    • Mar.
    • D. L. Harame et al., "Si/SiGe epitaxial-base transistors-Part II: Process integration and analog applications," IEEE Trans. Electron Devices, 42, pp. 469-482, Mar. 1995.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 469-482
    • Harame, D.L.1
  • 3
    • 0031142852 scopus 로고    scopus 로고
    • SiGe MMIC's and flip-chip MIC's for low-cost microwave systems
    • May
    • M. Case, "SiGe MMIC's and flip-chip MIC's for low-cost microwave systems," Microwave J., May 1997.
    • (1997) Microwave J.
    • Case, M.1
  • 4
    • 0015346471 scopus 로고
    • Broadband diode phase shifter
    • May
    • R. B. Garver, "Broadband diode phase shifter," IEEE Trans. Microwave Theory Tech., vol. MTT-20, pp. 314-323, May 1971.
    • (1971) IEEE Trans. Microwave Theory Tech. , vol.MTT-20 , pp. 314-323
    • Garver, R.B.1
  • 6
    • 0032072280 scopus 로고    scopus 로고
    • SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications
    • May
    • J. Cressler, "SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications," IEEE Trans. Electron Devices, vol. 46, pp. 572-589, May 1998.
    • (1998) IEEE Trans. Electron Devices , vol.46 , pp. 572-589
    • Cressler, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.