New challenges for 300 mm Si technology: 3D interconnects at wafer scale by aligned wafer bonding

Materials Science in Semiconductor Processing

Volumn 5, Issue 4-5 SPEC., 2002, Pages 425-428

  Dragoi, V ^a   Lindner, P ^a   Tischler, M ^a   Schaefer, C ^a  

^a EV GROUP   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; BANDWIDTH; BONDING; FABRICATION; INTERCONNECTION NETWORKS; MICROSCOPES; STACKING FAULTS; THERMAL EFFECTS; WSI CIRCUITS;

WAFER BONDING;

SILICON WAFERS;

EID: 0036960027     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00133-6     Document Type: Conference Paper

References (4)

1. Savastiouk S., Siniaguine O., Korczynski E. Adv Packaging. 9(3):2000;28.
2. Stoger G, Shiraki SF. SEMI Micromachine/MEMS Seminar SEMICON 99, Kansai, Japan, June 1999.
3. Brubaker C, Glinsner T, Lindner P, Schaefer C, Tischler M. Proceedings of VIth International Symposium on Semiconductor Wafer Bonding: Science, Technology, Applications, Electrochemical Society, San Francisco, September 2-7, 2001, p. 25.
4. Dragoi V, Glinsner T, Lindner P, Schaefer C, Weixlberger J. International MEMS/MST Industry Forum, SEMICON Europe, April 2002, Munchen, Germany.