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Volumn , Issue , 2002, Pages 943-946

Zinc-diffused InAsSbP/InAs and Ge TPV cells

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; INFRARED DETECTORS; LIQUID PHASE EPITAXY; PHASE EQUILIBRIA; PHOTOCURRENTS; PHOTOSENSITIVITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS; ZINC;

EID: 0036957810     PISSN: 01608371     EISSN: None     Source Type: Journal    
DOI: 10.1109/PVSC.2002.1190736     Document Type: Article
Times cited : (17)

References (8)
  • 5
    • 0033884421 scopus 로고    scopus 로고
    • Liquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devices
    • M.G. Mauk et al., “Liquid-Phase Epitaxy of Low-Bandgap III-V Antimonides for Thermophotovoltaic Devices”, J. of Crystal Growth, 211, 2000, pp. 189-193.
    • (2000) J. of Crystal Growth , vol.211 , pp. 189-193
    • Mauk, M.G.1
  • 6
    • 0035334828 scopus 로고    scopus 로고
    • Solution growth of thick III-V antimonide alloy epilayers for virtual substrates
    • M.G. Mauk, A.N. Tata, J.A. Cox, “Solution Growth of Thick III-V Antimonide Alloy Epilayers for Virtual Substrates”, J. of Crystal Growth, 225, 2001, pp. 236-243.
    • (2001) J. of Crystal Growth , vol.225 , pp. 236-243
    • Mauk, M.G.1    Tata, A.N.2    Cox, J.A.3
  • 7
    • 0032130959 scopus 로고    scopus 로고
    • Room temperature InAs photodiode - InGaAs LED pairs for methane detection in mid-IR
    • B. Matveev, M. Aidaraliev, N. Zotova, et al., “Room Temperature InAs Photodiode - InGaAs LED Pairs for Methane Detection in Mid-IR”, Sensors and Actuators, B51, 1998, pp. 233-237.
    • (1998) Sensors and Actuators , vol.B51 , pp. 233-237
    • Matveev, B.1    Aidaraliev, M.2    Zotova, N.3
  • 8
    • 85013581792 scopus 로고    scopus 로고
    • Type II heterojunction photodiodes in a GaSb/InGaAsSb system for 1.5-4.8 μm range
    • N.D. Stoyanov, M.P. Mikhailova, Yu.P. Yakovlev, et al., “Type II Heterojunction Photodiodes in a GaSb/InGaAsSb system for 1.5-4.8 μm range”, Semiconductors, 35, N4, 2001.
    • (2001) Semiconductors , vol.35 , Issue.4
    • Stoyanov, N.D.1    Mikhailova, M.P.2    Yakovlev, Y.P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.